50 500 (BPT) (MOSFET). (IGBT - Insulated Gate Bipolar Transistor) [1].
MOSFET , 80- , , . , , , . MOSFET , . .
80- , 90- ( International Rectifier) IGBT. .
, IGBT- . IGBT . . .
IGBT- p-n-p , MOSFET- (. 1,).
IGBT- , ( , ), MOSFET- ( , ). , , . IGBT- 4000 . 23 .
IGBT- MOSFET-, .
IGBT- . 2. p+-, p-n-p , . n-. - ( ) , p-n-p . ? . (B+1) . n- ( ), .
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p-n-p- ( ) n- ( ):
R - MOSFET IGBT ( n-); b - p-n-p-.
IGBT , , - trench-gate technology (. 2). 25 .
, , IGBT, (. 3).
IGBT 0,20,4 0,21,5 . IGBT 10 20 .
IGBT- . 4-6 [2].
IGBT- . -. IGBT-.
IGBT- "", , IGBT- n-p-n (. 1). , Rs , n-p-n , . , , .
IGBT- , dV/dt. , - . - , +15+16 . 1516 .
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IGBT- - RC- RCD-, [1].
IGBT- . IGBT- (10005000 ) +15 10%. , - 20 ( 56 ). - +20 . . IGBT- "" , .
. IGBT- 1001000 , 5 . , - .
. . , . , 100200 .
, IGBT- , , , -, - , IGBT- , . , . IGBT- . , , . - 1020 .
IGBT-, , . 7.