( ) :
BJT (bipolar junction transistor) ( );
FET (field effect transistor) - ;
JFET (junction gate field-effect transistor) - -n ;
MOSFET (metal-oxide-semiconductor field effect transistor) - -;
SIPMOS (Siemens Power MOS) - , Siemens Power MOS.
SIPMOS - ;
HEXFET (hexagonal field-effect transistor) - .
HEXFET , , - ;
VMOS (Vertical Metal Oxide Semiconductor) , PHILLIPS;
IGBT (Insulated Gate Bipolar Transistor) - .
HEMFET, HEMT ( High Electron Mobility Transisto) - .
MOSFET (SIPMOS, HEXFET)
, -.
.
. . ( ) . . (- ). . . . ( ).
() ( 500-1000 50-100 ).
( 5 ) , ( 0,01 ) , ( - ) .
, . .
: International Rectifier, Motorola, Siemens, Ixys, Mitsubishi