m ,
kT .
:
`L =`VT ×`t , ` t - (- ) . - .
.
` V =`tn × q × /m = μ × - μ [2/× ] - .
m -
q -
E - - (/)
: μn (Si) 3μp(Si). : μn (GaAs) 5,7 μn (Si).
μ μ .
1 2 1 0 0 -
. 2 - 0 > 1500
0
1000 .
` L -.
μ μ :
- N -
N .
:
`V = 3000 `V `V ..
.
`V
:
I = (q n μn E + q p μp E) [/2], (q n μn E) = In -
E , (q p μp E)= Ip .
Ż 105 B/
V 107 /; μ - ; I ; q - . = 1,6×10-19
.
- = - Dn dn/dx ( x),
Dn [2/] - . :
I = (q Dn dn/dx + q Dp d/dx) [/2], q Dn dn/dx , q Dp d/dx .
: Dn = φT μn = (kT/q) μn
Dp = φT μp = (kT/q) μp
φT = kT/q - [ 3000 φT 26 mV ()]
μ ; k ; 0; kT .
.
: s / = q (n μn + p μp) = 1/R
n(T) p(T) - , s / μ()
|
|
1 2 3 1 - 0 0 -
2 - n (p) - , 0 μn (μp)
3 - ¢
150 +150 .
Si | GaAs | Ge | |
μn 2/ | |||
μp 2/ | |||
r / | 2,3×105 | 108 |
s = i / , `I = q(nμn + pμp)E, , r / - , (n; p) - , (μn; μp) - .
.
, (.. ).
, .
:
1. () ,
2. ,
3. , .