(). () .
(). ( ). , .
( , , .
, , , . , .
1.
() . . , , . (). . . () . , - , , , ; , , . . . . , , . : . , , , , .
|
|
, , ( ). , .
- -. (, , ) - (. 1.1), () ( ).
MOSFET IGBT. (, .).
- : .
T ( ) (, .4 , ). , (. 1.2 a, T ).
, .
. 1.1. -
a)
)
. 1.2.
,
U = 1.25∙110 =138 .
U .
( IGBT) E1=2R∙I+U ( MOSFET).
:
U =U = UVD ³ 1, ʖ : =1,8;
( ).
1.1
U, B | 2, | n, / | I, A | I, A | R, | |
-321 | 3000-4100 | 0,58 | - | 25,8 |
, , :
, =4,26 .
, VT :
1. .
2. .
I max (I max)=1,3∙ I=1,3∙4,26 ³ 5,54 A
U max (U max)=1,25U∙=1,25∙110∙1,8 ³ 248 B.
Mosfet IRFS4229PBF (IR)
1.2
( ) | . . - Vds (B) | - Vg=10 Rdson max () | =25C Id () | Qg () | =25C Pd () | . Vgs max () | ./. td(on) / td(off) () | / ( ) tR / tF () | - JC (C/) | IG . () | (derating factor) Kd (/) |
IRFS4229PBF (IR) | 30 | 18/30 VDD = 125 V VGS = 10 B RG = 18 Ω ID = 26 A | 31/21 | 0.45 | 100 | 2.2 |
, , t=25˚. p-n . ( ) , . I max .1.3.
|
|
.1.3. I=f(t˚C)
, , 1˚(1 = 170 ˚).
.1.4. R=f(T˚C)
R :
:
(1.1)
.
IGBT IRGB4045DPBF(IR)
1.3
( ) | . . - VCES (B) | . =25C I () ( ) | . =100C I () | . - VCE(on) typ. (B) | ./. =25C td(on) / td(off) () | / ( ) tR / tF () | =25C Pd () | - RJC (C/) | Qg () | IG . () | . Vge max () | (derating factor) Kd (/) |
IRGB4045DPBF (IR) | 2.15 | 27/75 I=6 A RG=47 Ω VCC=400 V | 11/17 | 1.94 | 19.5 | 100 | 20 | 0.51 |
U .
Mosfet IGBT. , :
U . = 2.15 > Uc . = 0.643
IRFS4229PBF (IR) :
,
( , , (VD, VT R), ), .. 150 .
T () () ( Dn) . , :
. (1.2)
(1.2) I =L/R. (1.2) , .
. , DI= (..1.2,),
I= , I = ,
I= = 0,638 A, I = = 0,522 A,
DI= = 0,116 .
= , I I (101)% I ( = 0.1). D, =I, ( n=f()) Dn. , - ( ) Dn .
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(1.2) ( DI£(I I)) , . 1.5. . 1.5, ( n ) :
E=CEn+IR, (1.3)
, .
E |
+ |
- |
I |
R |
L |
+ |
- |
U = n |
. 1.5. |
, I = I, n = n, M = CI=M.
E . t t
,
t = L/R = = 6 .
L, [7]:
,
= 0,15523 .
0,6 0,25 ; , p = 2; . ( , = 3500 ./.).
Dt=t E=U . 1.2 I¥Dt=t , (.1.5) n=const,
.
(1.3), :
,
CE = = 0,0271 *./., = 2.137 A.
A (. 1.2, ; ), Dtu I..= 0, I..= DI = I. I., I. ¥Dt= tu = I¥Dt= tu I. ,
,
= 335 .
Dt ( (.1.2, ; )). I..= 0, I..= DI ,
,
= = 10,128 A, = 69 .
t t = t + t (T = 404 .), g g = t / T (g = 0,83). , , ( 2475 ). ( 10 ).
. DP, I. Dn , n n=const . DP :
,
DPmax ( DI Dn) g=0,5, ..
.
, DPmax 4 . ( U ), g g0,5, g0.
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, . . :
.
:
.
, , , =0,1, , ..
, ,
= 0.2983, .
T = 1,790 , f = 560 .
, f DP ( DI Dn), .. .
2475 , .
TL494 : , , , - , , , . TL494 , , , , ( ). OTC (. . 2.1). OTC 1 VREF , 0 ( GND).
. 2.1. ̖ TL494
IN1, IN2 1, 2;
IN1, IN2 1 2;
FB 1 2;
DTC ;
R ;
;
GND ;
1, 2 VT1 VT2;
1, 2 VT1 VT2;
OTC ;
V ;
VREF .
2ȖŻ VT1 VT2 , 0 (. . 2.2 ). ()-1 (0)-1. VT1 VT2 (. 2.2 , ). VT1 VT2 .
(. . 2.2) , YFB .
. 2.2. ̖ TL494;
VT1 VT2
KH1 0,12 (. . 2.1), tD 4% 0 . t.max = 0,96.T0 0,48.T0 . tD , , , YFB YDTC (. 2.2 , , ).
2.1.
(. 2.3 ).
RT CT( 6 5 ) :
, f0 = 2475 .
. , RT.
2.1
Vcc | 41 |
(Vcc+0.3) | |
41 | |
250 | |
1 | |
: -c L - | -25..85 0..70 |
C = 0.82 , RT.
|
|
RT = ,
RT = RT = 542 .
R=560 , PRt = 0.125 ;
IN2 ( +5 14 1-5 ), 80 () 2 . DTC ( 4) , 1, , VT1 VT2 .
. 2.3. L494
() (R) () , (1,5 ) (+0,2+2,7) Uy 0 1.35 , -. +5 - ( 14).
.2.4.
R 2-10 ( R=10 . PR = 125 ).
R1 R2 . , Uy=0 0,5 (50% ). ( TL494):
4% ()120 ;
50% ()x.
() R1 R2 -5 1,5 (R1 R2 R). () ( tu max=0,9T, 90% , 2). VD1 VD2 ( , Uy).
R1 = 1 , ( ) R2 :
R2
R2 = , R2 = = 428 .
IR2 = , IR2 = = 3.5 .
PR2 = ,
PR1 = .
R1 R1 = 1
PR1 = 0.125 , R2 R2= 430 PR2 = 0.125 .
U 1 U 2 VT1 VT2 (VT1 , VT2 ). Ż. R6 R7 :
PR6=PR7 = =
R6 , R7
R6 = R7=100 PR6=PR7 =0,125 .
( ) . , , .
.3.1, . . 1 VD1 ( ).
RG1 RG2.
, , , 1, U VD1. 1 VD1 , VT1 . VT2 , VT1 , VD1 1 UC1=U UVD1. , VT1 ( 3.1), VD1 . 1. , 1 ( 1).
IRFS4229PBF (IR) (. . 3.1).
3.1
[ ] | VHO / VLO, {VO,} | VCC, | ( ) VIN, | +/-IOUT, | +/-IIN, | ./. td(on)/td(off), | -/ tR/tF, | ||
IR2113 [IRS2113] | -0.6...625.3 / -0.3...25.3 | 10...20 | -25.6...50.6 [-20.3...45.6] (HIN,LIN,SD) | +2.5/-2.5 | +20/-1 [+20/-5] | 150/125 [160/150] | 35/25 | TTL/CMOS VBS UVLO SD |
:
VBS - .
HIN - .
LIN - .
TTL, CMOS TTL/CMOS - (TTL - , CMOS - ).
UVLO (UnderVoltage LockOut) - .
SD (Shutdown) - .
IR2113 , HIN LIN HO LO (. . 3.1 , ).
.3.1. IR2113 () ()
VDD ;
VSS ;
HIN, LIN , ;
SD ;
VCC ;
COM VCC;
HO, LO , ;
VB ;
VS .
RG1, RG2 , VDG1 VDG2, , . R1, R2 ( 0,5 ) (, ).
VD1 ( ), 1 , trr=10-100 , . . UF4007 . 3.2
3.2
Umax, | Imax, | t., c | U, | |
UF4007 | 1,7 |
1 , [8]:
.
Q3 ( );
I ( , I ≈ IG c );
Q1 ( 500-600 - 5 );
V ;
VD1;
.
1= =13,26 .
10-15 ( 0,1-1 ). ( ). TECAP =0,15 ., U = 25 .
( ) . , . VDG1 VDG2, VT , , .
RG1 RG2 (VDG1, VDG2, .3.1) - , VT I m I m . , RG1 RG2.
. :
( )
.
MOSFET : - ( ), - ( ), - ( (15-20) 8-10 . (. 3.2)
VT , , Q ( ). ( -) , .
VT .
, (, VT), , VT ( . 3.2).
(3.1)
( );
VT . (VDG1, VDG2, .3.1) . , (, VDG)
()
()
, = 14 .
, ( ) . VT.
()
()
8 = 27 .
(3.1)
, Q T- . :
27 P = 0.125 .