2.1. , , :
1. density n (), dense a; 2. vulnerability n (), vulnerable a; 3. processibility n (), process v; 4. intcrconnection n (), connect v; 5. suitable (), suit v; 6. contribution n (), contribute v; 7. rectification n (), rectify v; 8. amplification n (), amplify v; 9. layer n (), lay v; 10. alternately adv (), alter v; 11. perfection n (), perfect v; 12. purity n (), pure a;13. commercial ( ), commerce n
2.2. , :
1. unstable a (stable a ); 2. unconventional a (conventional ); 3. unlimited a (limited a ); 4. uncontrolled a (controlled a ); 5. unsuitable a (suitable ); 6. uncommon a (common a ); 7. unlike a (like a ); 8. impossible a (possible ); 9. imperfect a (perfect ); 10. impurity n (purity n ); 11. immobility n (mobility n )
2.3. , :
1. , exhibit ; 2. dimension , ; 3. delay ; 4. associated with ; 5. level ; 6. to develop ; 7. suitable ; 8. contribution ; 9. occurring , ; 10. traced, 1947 ; 11. gained favour .
2.4. , :
1. delay v (delay n ); 2. level v (level n ); 3. feature v (feature n ); 4. turn v (turn n ); trace v (trace n ); 6. reason v (reason n ;
)
2.5. . sutb, , super-, over- , , under- semi- :
sub-: subdivision n, substructure n, subcommittee n
super-: superheat n, superstructure n, supernatural a, superfast a
over-: overgrow v, overwork v, overheat v
under-: underproduce v, undergrow v, undercoat v, undercutting n
semi-: semiconductor n, semicircle n, semiannual a
.
2.6. (I ). , .
1. What would you say about the steady reduction of IC feature sizes? 2. What has allowed the integration of more and more devices on the same chip? 3. What does higher integration level allow? 4. What are the dominant factors limiting device performance? 5. What limits the design of any machine? 6. Who has made a great contribution to the study of semiconductor physics? 7. What would you say about polycrystalline materials? 8. What is essential foundation for semiconductor products?
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2.7. , . , ; , ; .
2.8. () . , :
1. dominant role of silicon as a material; 2. silicon dioxide; 3. a film of silicon; 4. a non-water soluble oxide; 5. presence of oxygen in silicon; 6. silicon wafer; 7. point-defects concentrations; 8. gallium arsenide
, .
1) N + Ved/3 form
1. The state of art influenced by the development of...
2. The prediction followed by the change of the pattern...
3. The event faced by the designers...
4. The wire joined completes...
2) N + Ved/3 form + prp
1. The capability relied upon is reached...
2. The technique referred to in the paper responds...
3. The benefit called for can be achieved...
4. The array thought of points out that...
3) N + Vto
1. The concept to be referred to evolves...
2. The point to be reached exceeds...
3. The mode to be considered stems from...
4. The reliability to be achieved reaches...
4) + enough + VtO
1. The impetus strong enough to give rise to...
2. The shift large enough to be considered...
3. The vehicle heavy enough to handle...
4. The shrink small enough not to be considered
5) Num + (N) +A
1. The shrink 5 cm long is marked...
2. The unit 4 m high...
3. The film.1 mm thick...
6) N + available
1. Improvement available is...
2. Performance necessary can...
3. Chip area present is...
4. Technology similar to the previous one is...
5. The shift possible is used...
7) N + in/under + N
1. The prediction in question gives...
2. The event under consideration shows...
3. The vehicle in operation reaches...
4. The pattern in use marks...
5. The chip under development provides...
8) N + Ving (+ N2)
1. The wire linking the ends was...
2. The wire being linked completes...
3. The benefit predicting the result fits... The benefit being predicted is...
4. The reliability concerning the device points... The reliability being concerned stems from...
9) N + Ved/3 form
1.The dimension required is responsible for... The dimension required the shift of...
2. The concept produced fits... The concept produced an impetus...
3. The response achieved is... The response achieved the value of...
2.9. . :
1. The high level of control of film thickness and resistivity uniformity required has led to the study of the kinetics of the deposition. 2. Time delay associated with the interconnection is dependent on two parameters. 3. The markedly different growth rate observed implies that gas phase equilibrium is not established.
2.10. , one(s) that, those .
one, ones: 1. one or more units; 2. one more unit; 3. one more advantage; 4. one or more advantages; 5. one single crystal; 6. one of the benefits; 7. not a static field but a dynamic one; 8. not a special acceptor but a common one; 8. one may make an effort; 9. one can predict; 10. complete ones; 11. applicable ones
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that, those: 1. is like that of a substrate; 2. is much more than that produced recently; 3. is lower than that provided by a new technique; 4. are more beneficial than those of new pattern
.
2.1. . , silicon, active and passive elements. . . / .
1. far from being- ; 2. at all ; 3. abundance
All the components of the circuit must be fabricated in a crystal of silicon or on the surface of the crystal. Silicon is far from being ideal material for these functions and only modest values of resistance and capacitance can be achieved. Practical microelectronic inductors cannot be formed at all. On the other hand, silicon is a material without equal for the fabrication of transistors, and the abundance of these active components in microelectronic devices more than compensates for the shortcomings of the passive elements.
2.2. . 10 . .
HBTs
Most recently research efforts have led to the fabrication of hetero-junction bipolar transistors (HBTs) based on GaAs and other -V compounds. These new devices offer the prospect of obtaining performance features similar to those of Si bipolar transistor translated to substantially higher frequency.
HBTs have large amounts of current and power gain and millimeter-wave frequencies.
Devices are fabricated on semi-insulating GaAs substrates and may be monolithically integrated, together with thin-film resistors and Shottky diodes, using conventional GaAs IC techniques.
Their current handling capability input voltage dc matching, breakdown voltage, and I/O noise are potentially better than those for GaAs FETs. Based on these characteristics, HBTs are expected to have bright future in microwave/miUimeter-wave ICs.
( )
.
1. feature n 1. ; ; 2.
feature size
feature v 1. , ; 2.
2. exhibit 1. , ; 2.
exhibition n 1. ; 2.
3. vulnerability n
vulnerable
4. processibiliry n
processing n
process n 1. ; 2.
process v processor
5. available a 1. ; ; 2. ()
availability n 1. ; 2.
6. enhance v ; ;
7. delay n 1. , ; 2.
delay v 1. ; 2.
8. significant ; significance n ;
9. determine v 1. , ; 2. ; 3. ; 4.
determination n 1. ; ; 2.
10. level n 1. ; 2.
level a 1. ; 2.
level v ;
11. net n 1. ; 2. ,
network n 1. , ; 2.
12. appreciable ,
appreciate v 1. , ; 2.
13. related ;
relate v ;
relationship n
14. subtle a 1. ; 2. ; 3.
15. design n 1. , ; 2. , ; 3. , ; 4.
design v 1. , ; 2.
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designer n ,
computer-aided design
block design
fault-tolerant design
geometry design
on-line circuit design
option design
16. tailor v ,
tailoring n ,
field tailoring
17. intrinsic a 1. , ; 2. ; ; 3. ( )
extrinsic ( )
18. suitable a 1. , ; 2.
suit v 1. ; 2.
19. common a 1. ; 2. , ; 3.
in common
commonly adv
20. contribution n 1. ; 2. ; ; 3. ; ; ,
contribute v 1. , ; 2. ; 3. ,
contributor n 1. ; 2.
21. rectification n 1. ; 2.
rectify v 1. ; 2.
barrier-layer rectification
diode rectification
rectifier n 1. ; 2.
tunnel rectifier
22. occur v 1. , ; 2. ; 3. ,
occurrence n 1. ; 2. ; 3. , ; 4. failure occurrence
23. turn v 1. ; 2. , ; 3. , ; 4. -.
turn n 1. ; 2. ; 3.
in turn
24. amplifier n
bulk-effect amplifier
charge-transfer amplifier
off-chip amplifier ()
on-chip amplifier
sample-and-hold amplifier
sense amplifier
amplify v ;
25. alternately adv
alternate a 1. ; 2.
alter v ;
alternating
26. trace v 1. ; 2. ; 3. ;
trace n 1. ; 2.
traceability: batch traceability ()
27. grain n ; ;
grain v
columnar grain
28. recognize v 1. ; 2.
recognizable
recognition n 1. ; ; 2.
29. immense a 1. ; 2.
immensely adv ,
30. reason v 1. ; ; 2.
reason n ;
reasonable ;
31. trap n ;
carrier-trap
electron trap ,
trap v
32. affect v ,
affected ,
33. additionally adv
additional
addition n 1. ; 2.
in addition to 1. ,
add v ;
34. purity n ;
impurity n
pure ,
purely adv ; ; ,
purify v
35. perfection n 1. , ; 2.
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perfect a 1. ; 2.
perfect v 1. ; 2.
perfectly adv
36. acceptor n 1. ; 2.
accept v 1. ; 2. ;
acceptable ;
37. witness v 1. ; 2.
38. gain v 1. ; ; 2. ; 3.
gain n 1. , ; 2. ; 3. ; 4.
collector-to-base current gain
current gain
logic gain
speed gain
39. commercial a 1. ; 2. ; 3.
commerce n
40. attributable ;
attribute n , ,
attribute v ;
41. soften v
soft a 1. ; 2. ;
software n
42. wafer n 1. ; 2. ; ; ; 3. ,
bipolar wafer /
building-block wafer /
customed wafer /
etch-separated wafer / ,
flat-wafer
process development wafer ,
wafering n /
wafertrack n / ,
43. vapour n ,
dopant vapour
vaporization n ;
44. durable a 1. ; 2. ,
durability n 1. ; 2. ,
duration n
45. adhere v 1. ; 2. -.
adherence n 1. , ; 2.
adhesion n ,
adhesive n 1. , ; 2.
46. mask n , ;
mask v
deposition mask
doping mask
evaporation mask
exposure mask 1. ; 2.
in situ mask
master mask
metal-on-glass mask
moving mask
overlaid mask /
production mask
self-aligned mask
maskant n
47. dopant n ;
donor dopant
implanted dopant
impurity dopant
spin-on dopant , /
doped
doper n
dope v
doping n
48. band n 1. ; 2. ,
49. gap n 1. , ; 2. , ; 3. ,
band gap
direct gap
graded band gap
mask gap /
proximity gap
50. permit v ;
permission n
permissible ,
51. impermeable a
permeate v
52. coating n 1. , ; 2.
dip coating
53. overlayer n ,
layer n , ;
lay v 1. , ; 2. , ; 3.
barrier layer
buried layer
cap layer
evaporated layer
host layer
multiple layer
registered layers
sandwiched layers
supported semiconductor layer /
layout n ;
54. detrimental ,
detriment n
55. maintain v 1. , ; 2. ; 3. ; 4.
maintenance n 1. , ; 2. ; 3.
56. range n 1. ; ; 2. ; 3. , ; 4.
range v 1. ; 2. ; 3. ,
57. specification n 1. , ; 2.
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specify v 1. ; 2.
specific a 1. ; 2. ; 3.
58. stringent ,
59. refinement n 1. ; 2.
refine v 1. ; 2.
refined
60. inherently adv ;
inherent ,
inherit v
61. opportunity n
62. explicit a: to be explicit .
63. conventional 1. ; 2. ; 3.
64. sufficients a
sufficiently adv
