( ) :
BJT (bipolar junction transistor) ( );
FET (field effect transistor) - ;
JFET (junction gate field-effect transistor) - -n ;
MOSFET (metal-oxide-semiconductor field effect transistor) - -;
SIPMOS (Siemens Power MOS) - , Siemens Power MOS.
SIPMOS - ;
HEXFET (hexagonal field-effect transistor) - .
HEXFET , , - ;
VMOS (Vertical Metal Oxide Semiconductor) , PHILLIPS;
IGBT (Insulated Gate Bipolar Transistor) - .
HEMFET, HEMT ( High Electron Mobility Transistor) - .
MOSFET (SIPMOS, HEXFET)
, -.
.
. . ( ) . . (- ). . . . ( ).
() ( 500-1000 50-100 ).
( 5 ) , ( 0,01 ) , ( - ) .
, . .
: International Rectifier, Motorola, Siemens, Ixys, Mitsubishi
MOSFET
MOSFET , (.11.1 ) .
- .
. MOSFET (.11.1) V- (.11.1)
|
|
! .
p- ( n ).
(.11.1) n+ (), p- () n- n+ - ().
.
- MOSFET ( n+ p ).
. 11.1 FET , - ; - ; V .
- p- n- n+ - . MOSFET .11.2
. 11.2 MOSFET
IGBT
IGBT (Insulated Gate Bipolar Transistor) - ().
( ) , ( ) 1978 .
IGBT 1980- , International Rectifier 1983 .
IGBT - - .
(1990- ) () IGBT .
IGBT :
- ;
- ;
- MOSFET ;
- , - ;
- - .
- 1000 , 10
IGBT, p-n-p , MOSFET- .
IGBT- . 11.3. p+-, p-n-p , .
. 11.3 IGBT .
n -.
(, ) - ( ) , p-n-p .
. (b+1) .
n - ( , . 1.3), .
|
|
IGBT :
. 11.4 IGBT .
IGBT (.11.5).
. 11.5 IGBT
HEMFET
HEMFET, HEMT ( High Electron Mobility Transistor), () - , , -, (. . ).
: , , , - ().
HEMT : HFET, HEMFET, MODFET, TEGFET, SDHT.
, - , , .
600 1 .
2010 . 2,5 .
, (MMIC - Monolithic Microwave Integrated Circuit).
, .
-