2 .1.
ͳ 1961 . () [ 8 ].
ZnGa2Se4 , [8]. 9600, 50-750 . 11500 2 , 6000, 5000 3700. ʳ .
- . , . ᒺ . , . . ᒺ , ᒺ . ~1 / 䳺 . , . ֳ .
Zn0,99 Mn0,01Ga2Se4, Zn0,93Mn0,07Ga2Se4 Zn0,91Mn0,09Ga2Se4 [4]. ZnGa2Se4. . . ZnGa2Se4.
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|
2.2. . ZnGa2S4
:
1. ();
2. ;
3. ;
4. .
5. .
, .
ZnGa2Se4 Mn i [ 4 ] .
.6. ZnGa2Se4 Mn.
ZnGa2Se4 Mn 1 2.
ZnGa2Se4 Mn. . .
III. Գ- ZnGa2S4
ZnGa2S4 [5,9]. .
3.1. ZnGa2S4
, - , . ZnGa2S4 - .
ZnGa2S4 [5] 300 77. ֳ .7.
300
2.1 . 2.2
2.36 . 1.96 . 77 . 2.25 . 77 - 2.45 . 4,2.10-4/ ZnGa2S4.
. 7. ZnGa2S4..
ZnGa2S4. . 0,24 . 230-400 0,49
. 2.23 , 0,24 . 2,1 . ϳ [5] ZnGa2S4..
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i ii () i i () ZnGa2Se4
.8. () () ZnGa2S4..
IV.
4.1. ZnGa2S4 Ge
³ , [4].
. .9.
. 9. ZnGa2S4
Ge
1-3 ; 4- ;
5-ϳ; 6- ; 7- ; 8- .
, , ZnGa2S4 , - ZnGa2S4. .
[5].
ZnGa2S4 Ge .
4.2. ZnGa2S4
ZnGa2S4 -26 200-1200.
.10.
10. -4:1- ; 2,3 ; 4-
; 5- ; 6-.
( , ) .
dGa2Se4 . 2<<n2. max min λ.
n= [N+ (N2-ns2)1/2 ]1/2,
N= (1+ ns2)/2+2 ns(max - min)/ max min,
d= Mλ1 λ1λ2 [n(λ1) λ2- n(λ2) λ1],
- λ1 λ2.
n d n , α=4π/λ.
4-5%.
α α=1/d ln(Tmax/Tmin} , . - α2, α ln α λ..
4.3. ˲ ֲ
ZnGa2S4 .
.11. Ge 1-5%
.12. Ge 5-10%.
6-4 .
1. - ZnGa2Se4 . 3- .
2. ZnGa2Se4 Ge 6 4-6 .
3. г .
˳
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Production Cjnclusions.//Cu(In,Ga)(S,Se)2 Based Solar Cells Sino-European
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5. ., . . .:. , 1977.-.1-
662 .
6. .., .., ..
ZnGa2Se4.//. . Fizika-2005-7-9 June 2005.-Baku.-N202.-p.769-770.
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8. .., ..
ZnGa2Se4/ . 2010.-N2.- C. 155-160.
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ZnGa2Se4./J. Phis. Chem. Solids. 1997.-V.58, N3.-P.503-507.
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defect Sphalerite Derivate./Acta Crystallographica C. Chemistry Division Research Department Naval Weapons Center China Lake, CA 93555.October 1989.-22p.