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| λ > 760 | Δ U < 1.9 | (GaAs) (AlGaAs) | ||
| 610 < λ < 760 | 1.63 < Δ U < 2.03 | - (AlGaAs) - (GaAsP) -- (AlGaInP) (III) (GaP) | ||
| 590 < λ < 610 | 2.03 < Δ U < 2.10 | - (GaAsP) -- (AlGaInP) (III) (GaP) | ||
| Ƹ | 570 < λ < 590 | 2.10 < Δ U < 2.18 | - (GaAsP) -- (AlGaInP) (III) (GaP) | |
| 500 < λ < 570 | 1.9[3] < Δ U < 4.0 | - (InGaN) / (III) (GaN) (III) (GaP) -- (AlGaInP) - (AlGaP) | ||
| 450 < λ < 500 | 2.48 < Δ U < 3.7 | (ZnSe) - (InGaN) (SiC) (Si) ( ) | ||
| 400 < λ < 450 | 2.76 < Δ U < 4.0 | - (InGaN) | ||
| 2.48 < Δ U < 3.7 | : / , , | |||
| λ < 400 | 3.1 < Δ U < 4.4 | (235 nm)[4] (215 nm)[5][6] (AlN) (210 nm)[7] - (AlGaN) -- (AlGaInN) (down to 210 nm)[8] | ||
| Δ U ≈ 3.5 | / ; |
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