, , ( ) ( ). . , . , , . Wo, , , .., . Wo , . , , .
, , , (). . |
, , . - :
=e(n. n+p. p),
n n ,
p p .
n=const EXP(- Wo/2kT), 1/3
0< kT < Wo . ni pi, ni = pi, ni + pi = 2ni.
,
=V/E, 2/(. )
, . .
2/(.) | 2/(.) | |
Ge | 0.380 | 0.180 |
Si | 0.135 | 0.050 |
GaAs | 0.820 | 0.040 |
InAs | 3.000 | 0.020 |
InSb | 7.000 | 0.400 |
InSb InAs.
. , . , . , , . . , , . , .
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Wo<0.1 . "" . 200-400 , "" . , , .
. , .
n. p=ni2, ni . , , . ( ..) .
() . , . : , -4 . (, .),
51., ( )
SiC- (. . - >700 ,. . )
GaAs- ( , . - )
=1237
=1,43
=0,85 /*
=0,043 /*
InSb- (. . . , , )
=525
=0,17
=3,3 /*
=0,046 /*
GaP- (. . )
=1500
=2,25
=0,011 /*
=0,0075 /*
52. . .
, ,, . . . ., ., .
(PbS, PbTe, PbSe) , , , .
. . ( ) . [1] , .
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